FDMC7572S N-Channel Power Trench® SyncFETTM is a low rDS(on) and high efficiency MOSFET device which can be used for synchronous rectifier, Notebook Vcore / GPU low side switch, Networking Point of Load low side switch and Telecom secondary side rectification applications.
The FDMC7572S is an N-Channel Power Trench SyncFET designed for synchronous rectification in DC/DC converters, notebook Vcore/GPU low side switching, networking point of load applications, and telecom secondary side rectification. It combines advanced silicon and package technologies to minimize losses while maintaining excellent switching performance.
Yes, the device is RoHS compliant.
The maximum continuous drain current is 40 A when the temperature is 25°C.
The maximum power dissipation is 52 W at a temperature of 25°C.
The operating and storage junction temperature range is from -55 to +150 °C.