Four planar PIN diode array in SOT363 small SMD plastic package.
The document describes the NXP BAP70AM, a silicon PIN diode array designed as a high-voltage current-controlled RF resistor. It features low capacitance and very low series inductance, making it suitable for RF attenuators, SAT (SATellite) TV applications, and car radio systems.
| Package type | SOT363 small SMD plastic package |
|---|---|
| Reverse voltage (Va) | 50 V |
| Forward current (Iz) | 100 mA |
| Total power dissipation (Prot) | 300 mW |
| Storage temperature (Tstg) | -65 to +150 °C |
| Forward voltage (Ve) typ. | 1.1 V |
The device is intended for RF attenuators, SAT (SATellite) TV applications, and car radio applications.
The absolute maximum reverse voltage rating for the BAP70AM is 50 V.