100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
The document describes the NXP Semiconductors BLF8G27LS-100, a high-efficiency Power LDMOS transistor intended for RF power amplifiers in base stations. It features improved video bandwidth and is designed for broadband operation within the 2500 MHz to 2700 MHz frequency range.
Key specifications include a drain-source breakdown voltage of at least 65 V, a maximum junction temperature of 225 °C, and typical power gain values between 15.8 dB and 17 dB. The transistor supports class-AB operation with excellent ruggedness against load mismatches up to a VSWR of 10:1.
| Power output | 100 W |
|---|---|
| Frequency range | 2500 MHz to 2700 MHz |
| Drain-source breakdown voltage (Min) | 65 V |
| Maximum junction temperature | 225 °C |
It is designed for RF power amplifiers in base stations and multi-carrier applications.
Yes, the product complies with Directive 2002/95/EC regarding Restriction of Hazardous Substances.
The transistor can withstand a load mismatch corresponding to a VSWR of 10:1.