NXP Semiconductors BLF184XR/BLF184XRS Power LDMOS Transistor Datasheet

A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.


NXP Semiconductors BLF184XR/BLF184XRS Power LDMOS Transistor Datasheet - cover page
Brand
NXP
Category
Transistor
Document type
Datasheet
Language
English
Pages
16
File format
PDF
File size
233 KB
Published
20 May, 2014
Updated
25 September, 2023
MD5 checksum
A11C10463136D23A71E9DC3A7E5072ED

About this manual

The document describes the BLF184XR and BLF184XRS as extremely rugged LDMOS power transistors designed for broadcast and industrial applications within the HF to 600 MHz band. Key features include easy power control, integrated ESD protection, high efficiency, and excellent thermal stability.

What's inside

  • Product profile
  • Pinning information
  • Ordering information
  • Limiting values
  • Thermal characteristics
  • DC characteristics
  • AC characteristics
  • RF characteristics
  • Test information

Specifications

Storage temperature-65 /+150 °C
Junction temperature225 °C

Frequently asked questions

What are the applications for this transistor?

The BLF184XR and BLF184XRS are designed for industrial, scientific and medical applications as well as broadcast transmitter applications.

What is the frequency range of this transistor?

The device operates in the HF to 600 MHz band.

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