NXP Semiconductors BLF888D/BLF888DS UHF Power LDMOS Transistor Datasheet

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.


NXP Semiconductors BLF888D/BLF888DS UHF Power LDMOS Transistor Datasheet - cover page
Brand
NXP
Category
Transistor
Document type
Datasheet
Language
English
Pages
11
File format
PDF
File size
141 KB
Published
20 May, 2014
Updated
25 September, 2023
MD5 checksum
153997A8E1AF31A94AC6DCBD23D6B9CC

About this manual

The BLF888D and BLF888DS are high-efficiency, rugged LDMOS transistors designed specifically for digital and analog broadcast transmitter applications. They feature excellent thermal stability and integrated ESD protection, making them ideal for Doherty configurations covering the full bandwidth from 470 MHz to 806 MHz.

What's inside

  • Product profile
  • Pinning information
  • Ordering information
  • Limiting values
  • Thermal characteristics
  • DC characteristics
  • AC characteristics
  • RF characteristics
  • Package outline

Specifications

Power Gain (Gp)40 to 48 dB
Third-Order Intermodulation Distortion (IMD3)-38 to -44 dBc
Drain-Source Voltage (VDS)104 V
Operating Frequency Range470 MHz to 806 MHz

Frequently asked questions

What are the applications for this transistor?

It is designed for broadcast transmitter applications in the UHF band, specifically for digital and analog broadcasting.

What is the VSWR tolerance of this device?

The device can withstand a load mismatch corresponding to a VSWR greater than or equal to 40:1 through all phases.

Is this product RoHS compliant?

Yes, the device is compliant to Directive 2002/95/EC regarding Restriction of Hazardous Substances.

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