Planar PIN diode in a SOD323 (SC-76) small SMD plastic package.
The NXP BAP70-03 is a silicon PIN diode designed as a high voltage, current-controlled RF resistor for use in attenuators. It features low diode capacitance and very low series inductance, making it suitable for RF applications such as (SAT) TV and car radio systems. The component is housed in a small SOD323 (SC-76) surface-mounted plastic package with two leads.
| Reverse voltage continuous | 50 V |
|---|---|
| Forward current continuous | 100 mA |
| Total power dissipation | 500 mW |
| Storage temperature | -65 to +150 °C |
| Junction temperature | -65 to +150 °C |
| Thermal resistance junction to solder point | 120 K/W |
| Forward voltage (IF = 50 mA) | 0.9 to 1.1 V |
| Reverse current (VR = 50 V) | 100 nA |
| Diode capacitance (VR = 0 V, f = 1 MHz) | 70 fF |
| Series inductance | 1.5 nH |
The BAP70-03 is available in a SOD323 (SC-76) small SMD plastic package.
It is used in RF attenuators, (SAT) TV, and car radio systems.
The maximum continuous reverse voltage is 50 V.