A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.
The document provides technical specifications for the NXP BLP10H605, a broadband laterally diffused metal-oxide semiconductor (LDMOS) driver transistor. It is designed as a 5 W plastic package suitable for broadcast transmitter and industrial, scientific, and medical (ISM) applications operating at frequencies from HF up to 1400 MHz.
Key features highlighted include easy power control, integrated dual side electrostatic discharge (ESD) protection, excellent ruggedness capable of withstanding high voltage standing-wave ratios (VSWR), and high efficiency. The datasheet details pinning information, limiting values such as drain-source voltage ratings, thermal characteristics, DC and AC electrical parameters, RF performance metrics at 860 MHz, and package outline dimensions for the HVSON12_ plastic thermal enhanced very thin small outline package.
| Power rating | 5 W |
|---|---|
| Frequency range | HF to 1400 MHz |
| Gate-source voltage (Min/Max) | -6 / +11 V |
| Storage temperature range | -65 to +150 °C |
| Package type | HVSON12_ plastic thermal enhanced very thin small outline package |
| Package dimensions (Body) | 5 x 6 x 0.85 mm |
It is designed for broadcast transmitter and industrial, scientific and medical (ISM) applications.
Yes, it can withstand a load mismatch corresponding to VSWR = 35 : 1 under specified conditions.
It features integrated dual side electrostatic discharge (ESD) protection.