NXP BLC8G27LS-100AV Power LDMOS Transistor Datasheet

100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.


NXP BLC8G27LS-100AV Power LDMOS Transistor Datasheet - cover page
Brand
NXP
Category
Transistor
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
112 KB
Published
20 May, 2014
Updated
25 September, 2023
MD5 checksum
7E406101A178E6F320ED11534C0BA5D7

About this manual

This document is an objective datasheet for the NXP BLC8G27LS-100AV, a 100 W LDMOS packaged asymmetrical Doherty power transistor designed for base station applications in the 2490 MHz to 2690 MHz frequency range. It provides typical RF performance data for W-CDMA signals and lists key features such as excellent ruggedness, high efficiency, and low thermal resistance.

What's inside

  • Product profile
  • Features and benefits
  • Applications
  • Pinning information
  • Ordering information
  • Limiting values
  • Thermal characteristics
  • Package outline
  • Handling information
  • Legal information

Specifications

Power100 W
Frequency Range2490 MHz to 2690 MHz
PackagePlastic earless flanged cavity package; 6 leads

Frequently asked questions

What is the application of the BLC8G27LS-100AV?

It is an RF power amplifier for LTE base stations and multi-carrier applications in the 2490 MHz to 2690 MHz frequency range.

Is the device compliant with RoHS?

Yes, the device is compliant to the Restriction of Hazardous Substances (ROHS) Directive 2002/95/EC.

What is the status of this datasheet?

This is an Objective data sheet, which contains data from the objective specification for product development.

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