NXP BLF8G24LS-150V 8G24LS-150GV 24LS-100GV transistor

230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.


NXP BLF8G24LS-150V 8G24LS-150GV 24LS-100GV transistor - cover page
Brand
NXP
Category
Transistor
Document type
Datasheet
Language
English
Pages
17
File format
PDF
File size
293 KB
Published
20 May, 2014
Updated
25 September, 2023
MD5 checksum
BCD75F66BD899FB24533F94FFF896C2D

About this manual

This document is an objective data sheet for the NXP BLF8G24LS-150V and BLF8G24LS-150GV, which are 150 W LDMOS power transistors. These devices feature improved video bandwidth and are designed for base station applications operating in the 2300 MHz to 2400 MHz frequency range.

What's inside

  • Product profile
  • Pinning information
  • Ordering information
  • Limiting values
  • Thermal characteristics
  • DC characteristics
  • RF characteristics
  • Test circuit
  • List of components

Specifications

Power150 W
Frequency range2300 MHz to 2400 MHz

Frequently asked questions

What is the typical video bandwidth of this transistor?

The BLF8G24LS-150V shows 70 MHz typical video bandwidth in a class-AB test circuit.

What is the typical power gain at 45 W output?

The typical power gain is 18 dB when the output power is 45 W.

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