Key facts
- Brand
- STMicroelectronics
- Model
- M58BW016BT
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-05
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ST M58BW016BT M58BW016BB M58BW016DT M58BW016DB 16 Mbit (512Kb x32 Boot Block Burst) 3V Supply Flash Memories handbook
This document is a technical datasheet for the M58BW016 series of 16 Mbit flash memories manufactured by STMicroelectronics. The devices are designed with a 3V supply voltage, offering access times of 80, 90, and 100ns, and support up to 56MHz effective zero wait-state burst reads.
Key features include hardware and software block protection mechanisms, optimization for Flash Disk (FD) drivers with fast program/erase suspend latency, and low power consumption modes. The memory is organized into eight parameter blocks and thirty-one main blocks.
STMicroelectronics M58BW016BT specifications
| Memory Capacity | 16 Mbit (512Kb x32) |
|---|---|
| Supply Voltage | Vpp = 2.7V to 3.6V |
| Access Time | 80, 90 and 100ns |
| Clock Frequency | 56MHz |
| Deep Power Down Current | 5µA Typical |
| Standby Current | 6µA Typical |
All STMicroelectronics M58BW016BT documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the manufacturer code for these devices?
The Manufacturer Code is 20h.
How many memory blocks are available in this device?
There are 8 Parameters Blocks and 31 Main Blocks.
What supply voltage is required for programming the M58BW016 flash memory?
Programming requires a Vpp supply of 2.7 V to 3.6 V, with an optional 12 V for fast program/erase.
How many parameter blocks does the device contain?
The device contains eight parameter blocks, which can be located at the top or bottom of the address space.