M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4 features high performance, low power consumption and so on, mainly applied to portable devices, networks, automobiles, industrial, consumer electronics and other fields.
The M58BW016 family provides 16 Mbit non‑volatile flash memory in PQFP80 and LBGA80 packages. It supports both asynchronous and synchronous bus operations, including high‑speed burst reads up to 56 MHz and configurable burst length, latency and type. The device includes eight parameter blocks and thirty‑one main blocks, with a boot‑block architecture that can be placed at the top or bottom of the address space.
Key electrical features include a 2.7 V–3.6 V Vpp supply for programming/erasing, a 2.4 V–3.6 V Vppa for I/O buffers, and an optional 12 V fast‑program mode. Low‑power operation is achieved with typical 5 µA deep‑power‑down current and 6 µA standby current. Block protection is provided via a WP pin and optional tuning‑protection password.
| Supply Voltage (Vpp) | 2.7 V to 3.6 V (12 V optional for fast program) |
|---|---|
| I/O Buffer Voltage (Vppa) | 2.4 V to 3.6 V |
| Access Time | 80 ns, 90 ns, 100 ns |
| Burst Read Speed | Up to 56 MHz effective zero‑wait‑state |
| Deep Power‑Down Current | 5 µA typical |
| Parameter Blocks | 8 (top or bottom) |
| Main Blocks | 31 |
Programming requires a Vpp supply of 2.7 V to 3.6 V, with an optional 12 V for fast program/erase.
The device contains eight parameter blocks, which can be located at the top or bottom of the address space.
Typical deep‑power‑down current is 5 µA.
The flash supports burst reads up to 56 MHz effective zero‑wait‑state.