Zetex ZXM64P02X P-Channel Enhancement Mode MOSFET Datasheet

The Zetex ZXM64P02X is a P‑Channel enhancement mode MOSFET with low on‑resistance, fast switching, and detailed electrical and thermal specifications.


Zetex ZXM64P02X P-Channel Enhancement Mode MOSFET Datasheet - cover page
Brand
Zetex
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
207 KB
Published
02 July, 2012
Updated
29 September, 2026
MD5 checksum
2DAAB6225AF25CC131A9C672331DD67C

About this manual

The ZXM64P02X is a high‑density P‑Channel enhancement mode MOSFET offered in a low‑profile SOIC package. It features a low on‑resistance of 0.090 Ω, fast switching speeds, low gate drive requirements, and a low threshold voltage, making it suitable for efficient power‑management circuits.

Typical applications include DC‑DC converters, power‑management functions, disconnect switches, and motor‑control circuits. Ordering information provides reel sizes and device markings, and the datasheet includes full thermal, electrical, and switching characteristics for design reference.

What's inside

  • Description
  • Features
  • Applications
  • Thermal Resistance
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Switching Characteristics
  • Package Dimensions
  • Ordering Information

Specifications

Drain‑Source Voltage (VDS)-20 V
On‑Resistance (RDS(on))0.090 Ω (typ)
Gate‑Source Threshold Voltage (VGS(th))-0.7 V
Junction‑to‑Ambient Thermal Resistance (RθJA)70 °C/W

Frequently asked questions

What is the maximum drain‑source voltage rating?

The device is rated for a maximum drain‑source voltage of –20 V.

What is the typical on‑resistance of the MOSFET?

Typical on‑resistance is 0.090 Ω.

What is the gate‑source threshold voltage?

The gate‑source threshold voltage is –0.7 V.

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