ZXM64P035L3 is a high performance P-channel enhancement mode MOSFET featuring a low on-resistance and high switching speed. It is ideal for high efficiency, low voltage power management applications.
This document is a provisional datasheet issued in January 2002 for the ZXM64P035L3 device. It describes a high cell density planar MOSFET designed for low on-resistance and fast switching speeds, making it suitable for power management applications such as Class D audio output stages and motor control.
The datasheet provides absolute maximum ratings, electrical characteristics including static and dynamic parameters, and source-drain diode specifications. It also includes a package outline with detailed dimensions in millimeters and inches.
| Drain-Source Voltage (V(BR)DSS) | -35 V |
|---|---|
| On-State Resistance (RDS(on)) | 0.075 Ohm |
| Package Type | TO-220 |
| Operating Temperature Range (Tj) | -55 to +150 °C |
The MOSFET operates and stores within a range of -55 to +150 °C.
The device can dissipate up to 20 W when the ambient temperature is 25°C.