This datasheet details the features, part numbering, electrical characteristics, and operational commands for Micron's 2, 4, and 8Gb NAND Flash Memory devices.
This document provides a comprehensive specification for Micron's 2, 4, and 8Gb x8/x16 multiplexed NAND Flash Memory devices. It covers various configurations including single-die 2Gb, dual-die stack 4Gb, and quad-die stack 8Gb options available in 48-pin TSOP Type I packages. The devices support operating voltages of 2.7V to 3.6V and offer commercial or extended temperature ranges.
| Organization (x8) | 2,112 bytes (2,048 + 64 bytes) |
|---|---|
| Organization (x16) | 1,056 words (1,024 + 32 words) |
| Block size | 64 pages |
| Device size (2Gb) | 2,048 blocks |
| Device size (4Gb) | 4,096 blocks |
| Device size (8Gb) | 8,192 blocks |
| Random read performance | 25µs |
| Sequential read performance | 30ns (3V x8 only) |
| Page program time | 300µs (TYP) |
| Block erase time | 2ms (TYP) |
| Endurance | 100,000 PROGRAM/ERASE cycles |
| Data retention | 10 years |
| Operating voltage | 2.7V–3.6V |
| Package type | 48 TSOP type I |
The devices operate with a VCC voltage range of 2.7V to 3.6V.
The devices are rated for 100,000 PROGRAM/ERASE cycles.
A 4Gb device contains 4,096 blocks.
The typical time to program a page is 300µs.