The International Rectifier IRF1010ES/IRF1010EL datasheet provides electrical characteristics, ratings, and package details for these HEXFET power MOSFETs.
The IRF1010ES (surface‑mount D2Pak) and IRF1010EL (low‑profile through‑hole) are HEXFET® power MOSFETs designed for high‑current applications. They feature low on‑resistance, fast switching, and rugged construction, making them suitable for a wide range of industrial designs.
Both devices are offered in two package styles (D2Pak and TO‑262) and are qualified for operation from –55 °C to +175 °C. Key specifications include a 60 V drain‑to‑source breakdown voltage, 12 mΩ typical on‑resistance at VGS = 10 V, and a continuous drain current of 84 A at 25 °C. Thermal resistance values are 0.75 °C/W (junction‑to‑case) and 40 °C/W (junction‑to‑ambient, PCB‑mounted).
| Drain‑to‑Source Breakdown Voltage (VDS) | 60 V |
|---|---|
| On‑Resistance (RDS(on)) | 12 mΩ |
| Continuous Drain Current (ID) @ 25 °C | 84 A |
| Power Dissipation (PD) | 200 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 0.75 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 40 °C/W |
| Gate Threshold Voltage (VGS(th)) | 2.0 V – 4.0 V |
| Total Gate Charge (Qg) | 130 nC |
The device can handle a continuous drain current of 84 A at 25 °C (VGS = 10 V).
The drain‑to‑source breakdown voltage is rated at 60 V.