Key facts
- Brand
- CEL
- Model
- NE650103M
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-09
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CEL NE650103M 10 W L & S-Band Power GaAs MESFET Datasheet
The CEL NE650103M is a 10 W GaAs MESFET designed for PCS, W-CDMA, WLL, satellite uplink, and BWA transmitter applications. It delivers high output power with high linear gain, high efficiency, and excellent linearity. The device is housed in a low-cost plastic package and is lead-free.
Read onlineCEL NE650103M specifications
| Linear Gain | 10.0 dB |
|---|---|
| Power Added Efficiency | 45 % |
| Saturated Drain Current | 2.0 A |
| Pinch-Off Voltage | -4.0 V |
| Thermal Resistance | 4.0 °C/W |
| Drain to Source Voltage | 15 V |
| Gate to Source Voltage | -7.0 V |
| Total Power Dissipation | 33 W |
| Channel Temperature | 175 °C |
Source: CEL NE650103M 10 W L & S-Band Power GaAs MESFET Datasheet
All CEL NE650103M documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the typical applications for the NE650103M?
It is designed for PCS, W-CDMA, WLL transmitter applications, as well as Satellite Uplink and BWA.
From: CEL NE650103M 10 W L & S-Band Power GaAs MESFET Datasheet
What is the usable frequency range?
The device is usable up to 2.7 GHz.
From: CEL NE650103M 10 W L & S-Band Power GaAs MESFET Datasheet
What are the typical applications for the NE650103M?
It is designed for PCS, W-CDMA, WLL transmitter applications, as well as satellite uplink and BWA.
From: CEL NE650103M 10 W L & S-Band Power GaAs MESFET Datasheet
What is the usable frequency range?
The device is usable up to 2.7 GHz.
From: CEL NE650103M 10 W L & S-Band Power GaAs MESFET Datasheet