STGF10NB60SD is an IGBT from ST with 600V voltage rating, low on-voltage drop and high current capability.
This document describes the STGF10NB60SD, an advanced N-channel IGBT from the PowerMESH family optimized for low-frequency applications (<1kHz) to achieve minimum on-voltage drop. The device features a patented strip layout and is co-packaged with a TurboSwitch antiparallel diode.
| Reverse Battery Protection (VEcR) | 20 V |
|---|---|
| Gate-Emitter Voltage (VGE) | +/- 20 V |
| Collector Current (continuous) at Tc = 25°C | 20 A |
| Collector Current (pulsed) | 80 A |
| Total Dissipation at Tc = 25°C | 25 W |
| Storage Temperature (Tsig) | -65 to 150 °C |
| Max. Operating Junction Temperature (Tj) | 150 °C |
The maximum continuous collector current is 20 A at a case temperature of 25°C.
The maximum collector-emitter voltage rating is 600 V.
The maximum operating junction temperature is 150 °C.