This document provides preliminary information on a new product currently in development or undergoing evaluation. The product is a high-voltage power MOSFET with features such as high input impedance, low on-voltage drop, low gate charge, high current capability, and high frequency operation.
This preliminary data sheet describes the STGP7NB60F and STGD7NB60F, which are N-channel 7A 600V PowerMESH™ IGBTs available in TO-220 and DPAK packages. The 'F' suffix identifies a family optimized to achieve very low switching times for frequency applications below 40kHz.
The document provides absolute maximum ratings, electrical characteristics, thermal data, and mechanical dimensions for both package types. It also includes application information for motor controls and SMPS/PFC circuits, along with test circuit diagrams for gate charge and inductive load switching.
| Collector-Emitter Voltage | 600 V |
|---|---|
| Collector Current (continuous) at Tc = 25°C | 14 A |
| Collector Current (continuous) at Tc = 100°C | 7 A |
| Total Dissipation at To = 25°C (TO-220) | 80 W |
| Total Dissipation at To = 25°C (DPAK) | 70 W |
| Operating Junction Temperature | 150 °C |
| Package Types | TO-220 / DPAK |
They are suitable for motor controls and SMPS and PFC, including both hard switch and resonant topologies.
The maximum collector current at a case temperature of 25°C is 14 A.
The maximum operating junction temperature is 150 °C.