STGD7NB60S is a high voltage insulated gate bipolar transistor launched by STMicroelectronics. It has the characteristics of high input impedance, low on-voltage drop, high current capacity, etc. The device uses DPAK packaging and is suitable for low frequency applications.
This document is a technical datasheet for the STGD7NB60S, an N-channel 7A - 600V DPAK PowerMESH IGBT manufactured by STMicroelectronics. The device is optimized for low frequency applications (<1kHz) to achieve minimum on-voltage drop and is suitable for applications such as light dimmers, static relays, and motor control. It features a surface-mounting DPAK (TO-252) power package.
| Collector-Emitter Voltage | 600 V |
|---|---|
| Collector Current (continuous) at Tc = 25°C | 5 A |
| Collector Current (continuous) at Tc = 100°C | 7 A |
| Collector Current (pulsed) | 60 A |
| Total Dissipation at Tc = 25°C | 55 W |
| Package Type | DPAK (TO-252) |
The device is suitable for light dimmers, static relays, and motor control applications.
The maximum operating junction temperature is 150°C.
It is optimized for low frequency applications, specifically less than 1kHz.