STGE50NB60HD is a high performance N-channel IGBT from STMicroelectronics. It features the latest high voltage technology with low on-voltage drop and low gate charge. It is suitable for high frequency motor controls, welding equipment, SMPS and PFC applications.
This document presents preliminary data for the STGE50NB60HD, an N-channel 50A - 600V Isotop PowerMESH™ IGBT. The device is optimized for high-frequency applications (less than 120kHz) and features a patented strip layout. It is co-packaged with a TurboSwitch™ antiparallel diode.
| Collector-Emitter Voltage | 600 V |
|---|---|
| Collector Current (continuous) at 25 °C | 100 A |
| Collector Current (continuous) at 100 °C | 50 A |
| Collector-Emitter Saturation Voltage | 2.8 V (Typ) |
| Total Gate Charge | 260 nC |
| Thermal Resistance Junction-case | 0.416 °C/W |
| Storage Temperature | -65 to 150 °C |
Yes, the device is co-packaged with a TurboSwitch™ antiparallel diode.
The maximum operating junction temperature is 150 °C.