STGE200NB60S is an STMicroelectronics high voltage power device, belonging to the PowerMESH™ IGBT series, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz). The device is suitable for low frequency motor controls and aluminum welding equipment applications.
This document is a technical datasheet for the STGE200NB60S, an N-channel PowerMESH™ IGBT optimized for low Vce(sat) at frequencies up to 1KHz. The device features high input impedance, low on-voltage drop, and includes tail current in off losses.
The datasheet provides absolute maximum ratings, electrical characteristics including switching parameters, thermal data, and safe operating areas. It also lists applications such as motor controls and aluminum welding equipment, along with mechanical dimensions for the TO-247 package.
| Gate-Emitter Voltage | +20 V |
|---|---|
| Collector Current (continuous) at 25°C | 200 A |
| Collector Current (continuous) at 100°C | 150 A |
| Total Dissipation at To = 25°C | 600 W |
| Storage Temperature Range | -65 to 150 °C |
| Max. Operating Junction Temperature | 150 °C |
The device is optimized for low frequency motor controls and aluminum welding equipment.
The total gate charge (Qg) is typically 560 nC under test conditions of VceE = 480V and Ic = 100 A.