STP10NA40 and STP10NA40FI are N-channel enhancement mode fast power MOS transistors. They have low RDS(on) and gate charge, unmatched ruggedness, and superior switching performance. They are suitable for high current, high-speed switching, switch mode power supplies, DC-AC converters for welding equipment and uninterruptible power supplies, and motor drive.
This document provides comprehensive technical specifications for the STP10NA40 and STP10NA40FI series of N-Channel Enhancement Mode Fast Power MOS Transistors manufactured by SGS-Thomson Microelectronics. The devices are designed for high current, high speed switching applications such as switch mode power supplies (SMPS), DC-AC converters for welding equipment, uninterruptible power supplies, and motor drives.
| Drain-source Voltage (VDS) | 400 V |
|---|---|
| Gate-source Voltage Rating | +30 V |
| Continuous Drain Current (25°C) | 10 A (STP10NA40), 6.3 A (STP10NA40FI) |
| Pulsed Drain Current | 40 A |
| Total Dissipation (25°C) | 125 W (STP10NA40), 45 W (STP10NA40FI) |
| Static Drain-source On Resistance | < 0.55 Ω |
| Operating Junction Temperature (Tj) | 150 °C |
They are suitable for high current, high speed switching, switch mode power supplies (SMPS), DC-AC converters for welding equipment and uninterruptible power supplies, and motor drives.
The STP10NA40 uses a TO-220 package, while the STP10NA40FI uses an ISOWATT220 package.
Yes, the STP10NA40 is 100% avalanche tested with repetitive avalanche data provided at 100°C.