This document describes an N-Channel Logic level power MOSFET specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications, making them easier and safer to drive (even at very high frequencies), and enabling DC/DC power supply designs with higher overall efficiency.
This document is a datasheet for the Fairchild FDP8030L and FDB8030L N-Channel Logic Level PowerTrench MOSFETs. These devices are designed to improve the efficiency of DC/DC converters by offering faster switching and lower gate charge compared to other MOSFETs with similar on-resistance specifications. The FDP series is available in TO-220 packages, while the FDB series is available in TO-263AB packages.
| Drain-Source Voltage | 30 V |
|---|---|
| Total Power Dissipation @ TC = 25°C | 187 W |
| Operating Junction Temperature Range | -65 to +175 °C |
| Thermal Resistance, Junction-to-Case | 0.8 °C/W |
| Thermal Resistance, Junction-to-Ambient | 62.5 °C/W |
The maximum junction temperature rating is 175 °C.
The maximum junction temperature rating is 175 °C.
The continuous drain current rating is 80 A.
A standard TO-263AB/D2PAK reel contains 800 units.