The FDP8874 is a N-channel MOSFET from Fairchild Semiconductor Corporation. It has a rated voltage of 30V and a maximum current of 114A. The typical on-resistance is 5.3mΩ. The device is manufactured using Trench technology and has low gate charge and high switching speed.
This document is a datasheet for the FDP8874 N-Channel PowerTrench® MOSFET, designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The device is optimized for low gate charge, low rDS(ON), and fast switching speed.
| Drain to Source Voltage | 30 V |
|---|---|
| Drain Current (Continuous) | 114 A |
| Power Dissipation | 110 W |
| Drain to Source On Resistance | 5.3 mΩ |
| Package Type | TO-220AB |
The maximum continuous drain current is 114 A at TC = 25°C and VGS = 10V.
The drain to source on resistance is 5.3 mΩ when VGS is 10V and ID is 40A.
The operating and storage temperature range is from -55°C to 175°C.