FDP8870 is a N-Channel MOSFET manufactured by Fairchild Semiconductor Corporation. It has a rated voltage of 30V and a rated current of 156A. Its features are low on-resistance (4.1mΩ) and fast switching speed.
The document describes the Fairchild FDP8870, an N-Channel MOSFET optimized for low gate charge and fast switching speed to improve efficiency in synchronous or conventional PWM controllers. It features high performance trench technology for extremely low on-resistance (RDS(on)).
Key electrical characteristics include a drain-to-source breakdown voltage of 30V and a maximum continuous drain current of 156A at Tj = 25°C with VGS = 10V. The device is available in the TO-220AB package.
| Drain to Source Voltage (VDS) | 30 V |
|---|---|
| Continuous Drain Current (Tj = 25°C, VGS = 10V) | 156 A |
| Continuous Drain Current (Tj = 25°C, VGS = 4.5V) | 147 A |
| Power Dissipation | 160 W |
| Operating and Storage Temperature Range | -55 to 175 °C |
| Thermal Resistance Junction to Case (TO-220) | 0.94 °C/W |
| Package Type | TO-220AB |
The maximum continuous drain current is 156 A when Tj = 25°C and VGS = 10V.
The drain-to-source breakdown voltage is 30 V.
Yes, the FDP8870_NL is the lead free product.