The IRSF3010 is a three terminal monolithic SMART POWER MOSFET with built in short circuit, over-temperature, ESD and over-voltage protections.
The International Rectifier IRSF3010 is a three-terminal monolithic SMART POWER MOSFET designed for applications requiring robust protection. It integrates on-chip circuits that latch off the device if drain current exceeds 14A or junction temperature reaches 165°C, remaining off until the input is driven low.
The device actively clamps the drain-to-source voltage at approximately 55V to improve performance during turn-off with inductive loads. It features extremely low operating input current (300uA), making it compatible with standard POWER MOSFET designs, and includes dual set/reset threshold inputs.
| Continuous Drain to Source Voltage (Vds, max) | 50 V |
|---|---|
| Over-Current Shutdown Threshold (lds(sd)) | 14 A |
| Over Temperature Shutdown Threshold (Tj(sd)) | 165 °C |
| Drain to Source Clamp Voltage (Vds,clamp) | 50 V |
| Power Dissipation (Pa) | 40 W |
| Unclamped Single Pulse Inductive Energy (Eas) | 400 mJ |
| ESD Protection Voltage (Human Body Model) | 4000 V |
The device is suitable for DC Motor Drive and Solenoid Driver applications.
Yes, its input current requirements are very low (300uA), making it compatible with most existing designs based on standard POWER MOSFETs.
The drain to source voltage is actively clamped at 55V (typical) prior to avalanche.