The IRF100B202 is a 100 V HEXFET power MOSFET with 7.2 mΩ typical on‑resistance and 97 A continuous drain current, detailed in this datasheet.
The IRF100B202 HEXFET power MOSFET is designed for brushed and BLDC motor drives, battery‑powered circuits, bridge topologies, synchronous rectifiers, resonant supplies, and DC/DC or AC/DC converters. It offers improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance, and RoHS‑compliant, lead‑free packaging.
Key specifications include a 100 V drain‑to‑source breakdown voltage, typical on‑resistance of 7.2 mΩ at VGS = 10 V, continuous drain current of 97 A at 25 °C, and a gate threshold voltage ranging from 2.0 V to 4.0 V. The device is supplied in a TO‑220AB package and meets industrial qualification standards.
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | 100 V |
|---|---|
| Typical On‑Resistance (RDS(on)) | 7.2 mΩ |
| Continuous Drain Current (ID) @ 25 °C | 97 A |
| Gate Threshold Voltage (VGS(th)) – Minimum | 2.0 V |
The IRF100B202 has a drain-to-source breakdown voltage of 100 V.
The typical on‑resistance is 7.2 mΩ.
It can handle up to 97 A of continuous drain current at 25 °C.