This document introduces the features and characteristics of IRF's N-channel power MOSFETs, including power, voltage, frequency, temperature, etc., and application circuit diagrams.
The IRL530PbF is a logic‑level HEXFET power MOSFET from International Rectifier, offered in a TO‑220AB package for industrial and commercial applications. The document lists its key features such as fast switching, low on‑resistance and lead‑free construction.
Detailed specifications include absolute maximum ratings, electrical characteristics, package outline, and layout considerations for optimal performance. The datasheet also provides mechanical dimensions, lead assignments, and marking information for assembly and testing.
| Continuous Drain Current (Id) @ 25°C | 15 A |
|---|---|
| Pulsed Drain Current (Id) @ 25°C | 60 A |
| Power Dissipation (Pd) @ 25°C | 88 W |
| Gate Threshold Voltage (Vgs(th)) | 1.0 – 2.0 V |
| Drain‑to‑Source Breakdown Voltage (Vds) | 199 V |
The maximum continuous drain current is 15 A.
The device can handle a pulsed drain current of up to 60 A.
The gate threshold voltage ranges from 1.0 V to 2.0 V.
The breakdown voltage is specified as 199 V.