This data sheet provides specifications and dimensions for the IRL630PbF.
The IRL630PbF is a third‑generation HEXFET power MOSFET offering fast switching, low on‑resistance, and rugged design. It is supplied in a TO‑220AB package, widely used in commercial‑industrial applications up to about 50 W of power dissipation.
The document lists absolute maximum ratings, electrical characteristics, switching test circuits, and package dimensions. Key parameters include a 200 V drain‑to‑source breakdown voltage, 9 A continuous drain current, and a typical on‑resistance of 0.50 Ω. Various test waveforms and thermal impedance data are also provided.
| Total Gate Charge (Qg) | 40 nC |
|---|---|
| Power Dissipation (Pd) at 25 °C | 74 W |
| Package Type | TO‑220AB |
It is supplied in a TO‑220AB package.