The document introduces a lead-free product from the IRF brand. The document provides supplier query information, as well as assembly and marking information for the product.
The IRFBC20S/LPbF is a HEXFET® power MOSFET offered in surface‑mount (D‑Pak) and low‑profile through‑hole (D‑Pak) packages. It provides a 600 V drain‑to‑source breakdown voltage, low on‑resistance, and fast switching suitable for high‑current applications up to 2 A continuous drain current.
The document lists absolute maximum ratings, detailed electrical characteristics, thermal performance, package dimensions, and tape‑and‑reel handling data, along with test circuit examples for diode recovery and gate charge measurements.
| Drain‑to‑Source Breakdown Voltage (Vds) | 600 V |
|---|---|
| Power Dissipation @ 25 °C (Pd) | 3.1 W |
| Junction‑to‑Case Thermal Resistance (Rjc) | 2.5 °C/W |
| Gate‑to‑Source Voltage (Vgs) | ±20 V |
| Total Gate Charge (Qg) | 18 nC |
| Operating Temperature Range | -55 °C to +150 °C |
The device is rated for a maximum drain‑to‑source breakdown voltage of 600 V.
The MOSFET operates from –55 °C up to +150 °C.
The junction‑to‑case thermal resistance is 2.5 °C/W.