This document describes the features and characteristics of IRFB3077PbF HEXFET power MOSFET, including worldwide best RDS(on), improved gate, avalanche and dynamic dV/dt ruggedness, fully characterized capacitance and avalanche safe operating area, enhanced body diode dV/dt and dI/dt capability.
The IRFB3077PbF is a HEXFET® power MOSFET designed for high‑efficiency synchronous rectification in SMPS, UPS, and high‑speed switching applications. It offers low on‑resistance, high current capability, and robust avalanche performance.
The document lists absolute maximum ratings, static and dynamic electrical characteristics, thermal resistance values, and detailed package dimensions for the TO‑220AB case. It also includes typical characteristic curves, avalanche energy limits, and layout recommendations for optimal performance.
| Continuous Drain Current (Id) @ 25°C | 210 A |
|---|---|
| Maximum Power Dissipation (Pd) | 370 W |
| Gate Threshold Voltage (Vgs(th)) | 2.0 V |
| Package | TO‑220AB |
The IRFB3077PbF can handle up to 210 A of continuous drain current at 25 °C.
The device is rated for a maximum power dissipation of 370 W.
It is supplied in a TO‑220AB package.