IRFB3307 is a 75v 5.0m 130a Schottky power MOSFET produced by irf company. It is mainly used in high efficiency synchronous rectification, uninterruptible power supply, high speed power switching and other fields.
This datasheet details the specifications of the IRFB3307 HEXFET power MOSFET, covering absolute maximum ratings, static and dynamic electrical characteristics, and diode behavior. It also includes thermal response data, recommended layout considerations, and mechanical dimensions for the TO-220AB package.
The document lists typical performance parameters such as drain current, on‑resistance, gate charge, and breakdown voltage, along with thermal resistance values and package outline dimensions. Additional information on tape‑and‑reel handling and compliance notes are provided at the end of the sheet.
| Maximum Power Dissipation (Pd) | 250 W |
|---|---|
| Gate‑to‑Source Voltage (Vgs) | +20 V |
| Drain‑to‑Source Breakdown Voltage (Vds) | 75 V |
| Junction‑to‑Case Thermal Resistance (RθJC) | 0.61 °C·W |
| Package Type | TO‑220AB |
The gate threshold voltage ranges from 2.0 V to 4.0 V.
The device is supplied in a TO‑220AB package.
The datasheet lists a maximum power dissipation of 250 W.