The IRFP3306PbF is a high efficiency, high performance power MOSFET with a 60V maximum voltage rating and a typical on-resistance of 3.3mΩ. It is suitable for applications such as high efficiency synchronous rectification, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits.
The IRFP3306PbF is a high‑efficiency power MOSFET designed for synchronous rectification, high‑speed switching, and hard‑switched high‑frequency circuits. It offers a 60 V drain‑to‑source breakdown voltage, low on‑resistance, and robust avalanche capability.
Key specifications include a continuous drain current of 120 A at 25 °C, a maximum power dissipation of 220 W, and a gate‑to‑source voltage rating of +20 V. The device is supplied in a TO‑247AC package with detailed thermal resistance values and recommended layout guidelines for low stray inductance and optimal performance.
| Continuous Drain Current (25 °C) | 120 A |
|---|---|
| Maximum Power Dissipation | 220 W |
| Gate‑to‑Source Voltage Rating | +20 V |
| Drain‑to‑Source Breakdown Voltage | 60 V |
| On‑Resistance (Rds(on)) | 33 mΩ |
| Gate Threshold Voltage | 2.0 V |
| Total Gate Charge | 85‑120 nC |
| Forward Voltage (Body Diode) | 13 V |
| Thermal Resistance Case‑to‑Sink (Flat Greased Surface) | 0.24 °C/W |
| Thermal Resistance Junction‑to‑Ambient | 40 °C/W |
The device can handle up to 120 A continuous drain current at 25 °C.
The gate‑to‑source voltage rating is +20 V.
It is supplied in a TO‑247AC package.
The drain‑to‑source breakdown voltage is 60 V.