The IRSF3011 is a three-terminal monolithic Smart Power MOSFET with built-in short circuit, over-temperature, ESD and over-voltage pro-tections.
The IRSF3011 is a three-terminal monolithic Smart Power MOSFET with built-in short circuit, over-temperature, ESD, and over-voltage protections. The on-chip protection circuit latches off the power MOSFET if the drain current exceeds 7A or the junction temperature exceeds 165°C.
| Continuous Drain to Source Voltage (Vds) | 50 V |
|---|---|
| Power Dissipation (Pd) | 30 W |
| Unclamped Single Pulse Inductive Energy (EAS) | 200 mJ |
| Operating Junction Temperature Range (Top) | -55 to 165 °C |
| Drain to Source Clamp Voltage (Vds,clamp) Typical | 54 V |
| Drain to Source On Resistance (Rds(on)) Max @ Vin=5V | 200 mΩ |
| Over-Current Shutdown Threshold (Idssd) | 7 A |
| Over Temperature Shutdown Threshold (Ti(sd)) | 165 °C |
| Electrostatic Discharge Voltage (Human Body Model) | 4000 V |
The device includes short circuit, over-temperature, ESD, and over-voltage protections.
The protection circuit latches off the power MOSFET if the drain current exceeds 7A.
The drain-to-source voltage is actively clamped at 54V (typical).