International Rectifier IRF3808S/IRF3808L HEXFET Power MOSFET Datasheet

About this manual

This document is a datasheet for the International Rectifier IRF3808S and IRF3808L HEXFET Power MOSFETs. These devices are designed specifically for automotive applications, featuring a 75V drain-to-source breakdown voltage and a low on-resistance of 5.9 mΩ typical. Key benefits include an advanced process technology for efficiency, a 175°C operating junction temperature, and fast switching speeds.

What's inside

• Typical Applications
• Absolute Maximum Ratings
• Electrical Characteristics
• Source-Drain Ratings
• Thermal Resistance
• Package Outline
• Part Marking Information
• Circuit Layout Considerations

Specifications

Frequently asked questions

What is the maximum operating junction temperature for this MOSFET?

The device can operate at a junction temperature up to 175°C.

What is the continuous drain current rating at an ambient temperature of 25°C?

The maximum continuous drain current is 106 A when the case temperature is 25°C.