The SM10LZ47 is a bidirectional triode thyristor produced by TOSHIBA. Its rated reverse off-state voltage is 800V, its rated on-state current is 10A, and its rated gate voltage is 10V.
This document is a technical datasheet for the Toshiba SM10LZ47 silicon planar type bi-directional triode thyristor. It specifies that the device is intended for AC power control applications.
The datasheet provides comprehensive electrical characteristics, including a repetitive peak off-state voltage of 800V and an RMS on-state current of 10A. It also lists maximum ratings such as isolation voltage and thermal resistance.
| Repetitive Peak Off-State Voltage (VDRM) | 800 V |
|---|---|
| R.M.S On-State Current (IT(RMS)) | 10 A |
| Peak One Cycle Surge On-State Current | 100 (50Hz) / 110 (60Hz) |
| Isolation Voltage (VISOL) | 1500 V AC |
| Peak Gate Power Dissipation (Pgm) | 5 W |
| Junction Temperature Range (Tj) | -40~125 °C |
The maximum junction temperature is 125°C.
The device has a repetitive peak off-state voltage of 800 V, an RMS on-state current of 10 A, and a peak gate power dissipation of 5 W.
The thyristor weighs 1.7g.
The junction temperature ranges from -40 to 125 °C, and the storage temperature range is also -40 to 125 °C.