This document introduces an empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses.
The document introduces a new PSPICE electro-thermal subcircuit designed specifically for vertical DMOS (VDMOS) power MOSFETs. This macro-model implementation combines the existing highly accurate electrical model with a new thermal component to create a self-heating simulation tool. The model is independent of SPICE's global temperature definition, allowing for more realistic dynamic thermal response simulations.
The significant advantage is that knowledge of device physics or process details are not necessary to implement the parametric data within the model.
Performance is independent of SPICE's global temperature definition, circumventing the level-1 NMOS model primitive temperature limitation.