This document presents an empirical self-heating SPICE MOSFET model that accurately portrays the vertical DMOS power MOSFET electrical and thermal responses. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model [2,3] is highly accurate and is recognized in the industry. The sequence of the model calibration procedure using parametric data is described. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is independent of SPICE’s global tem- perature definition.
The document introduces a new PSPICE electro-thermal subcircuit designed for power MOSFETs. This macro-model accurately portrays the vertical DMOS power MOSFET's electrical and thermal responses, combining existing electrical models with a new thermal component. It is designed to address inaccuracies in standard SPICE models, particularly regarding dynamic performance and self-heating effects independent of global temperature definitions.
The note details the implementation of the self-heating model using behavioral models (ABM) to describe temperature-dependent resistive elements. It outlines a specific parameter extraction methodology, guiding users through the sequence of calibrating transfer curves, saturation curves, body diode characteristics, breakdown voltage, capacitance, and the thermal network using parametric data.
It presents an empirical self-heating SPICE MOSFET model that accurately portrays the vertical DMOS power MOSFET electrical and thermal responses.
The simulation response tracks dynamic thermal response and remains independent of SPICE's global temperature definition.
It overcomes the limitation that PSPICE resistor ABMs do not permit voltage node references by using a voltage-controlled current source.