This document describes the features and characteristics of HUF76407D3 and HUF76407D3S, N-channel logic level UltraFET® power MOSFET products, including ultra-low on-resistance, temperature compensated PSPICE and SABER electrical models, Spice and SABER thermal impedance models, etc.
The document provides a comprehensive technical overview of the HUF76407D3 and HUF76407D3S N-Channel Logic Level UltraFET Power MOSFETs. Key features include ultra-low on-resistance (DS(ON) = 0.107 Ohm at Vgs=5V), temperature-compensated simulation models for PSPICE and SABER, and availability in JEDEC TO-251AA and TO-252AA packages.
The datasheet lists absolute maximum ratings such as a drain-to-source voltage of 60V and continuous drain currents up to 12A at 25°C. It includes detailed electrical specifications for off-state, on-state, thermal, switching, gate charge, and capacitance parameters, along with typical performance curves illustrating characteristics like power dissipation, safe operating area, and switching times versus gate resistance.
| Continuous Drain Current (Tc = 25°C, Vgs = 5V) | 1 A |
|---|---|
| Continuous Drain Current (Tc = 25°C, Vgs = 10V) | 12 A |
| Power Dissipation | 38 W |
| Drain to Source On Resistance (Vgs = 5V) | 0.107 Ohm |
| Thermal Resistance Junction to Case (TO-251/TO-252) | 3.94 °C/W |
The devices are available in JEDEC TO-251AA and JEDEC TO-252AA packaging.
Yes, adding the suffix T to the part number obtains the TO-252AA variant in tape and reel.
The datasheet includes Temperature Compensated PSPICE and SABER simulation models.