This product is a N-channel logic level ultra-low resistance power MOSFET with ultra low gate resistance (rDS(ON) = 0.030 Ω, VGS = 10V, rDS(ON) = 0.035 Ω, VGS = 5V), which can be used in various applications.
This document is a datasheet for the HUF76423P3 (TO-220AB) and HUF76423S3S (TO-263AB) N-Channel Logic Level UltraFET Power MOSFETs. The devices feature an ultra-low on-resistance of 0.035 Ohm at Vgs = 10V and are available with simulation models for PSPICE and SABER.
| Drain Current (Continuous) | 33 A |
|---|---|
| Drain to Source Voltage | 60 V |
| On-Resistance (Typical) | 0.035 Ohm |
| Thermal Resistance Junction to Case | 1.76 OC/W |
| Operating Temperature Range | -55 to 175 °C |
The HUF76423P3 is packaged in TO-220AB.
The HUF76423S3S is packaged in TO-263AB.
Yes, the datasheet includes Temperature Compensated PSPICE and SABER Electrical Models.