HUF76429P3, HUF76429S3S is a 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET from Fairchild Semiconductor Corporation.
The document is a technical datasheet for the Fairchild HUF76429P3 and HUF76429S3S, which are 44A, 60V, 0.025 Ohm N-Channel Logic Level UltraFET Power MOSFETs. These devices are available in JEDEC TO-220AB and TO-263AB packages, respectively, and feature ultra-low on-resistance suitable for high-efficiency switching applications.
The datasheet details absolute maximum ratings, electrical specifications including off-state and on-state parameters, thermal characteristics, and switching specifications. It also includes typical performance curves for power dissipation, drain current, transconductance, and capacitance, along with test circuits and waveforms for unclamped inductive switching, avalanche capability, and gate charge measurements.
| Continuous Drain Current (Tc=25°C, Vgs=10V) | 44 A |
|---|---|
| Continuous Drain Current (Tc=25°C, Vgs=5V) | 47 A |
| Power Dissipation | 110 W |
| Operating and Storage Temperature | -55 to 175 °C |
| Thermal Resistance Junction to Case (TO-220 and TO-263) | 1.36 OC/W |
| Drain to Source On Resistance (Typical) | 0.025 Ohm |
The maximum continuous drain current is 47 A under these conditions.
The HUF76429P3 is available in TO-220AB and the HUF76429S3S in TO-263AB.
The typical on-resistance is 0.025 Ohm.