This datasheet provides specifications for the NTP52N10 power MOSFET, including maximum voltage, maximum current, and maximum power.
This document is a datasheet for the NTP52N10 Power MOSFET, an N-Channel Enhancement Mode device packaged in TO-220. Key features include a source-to-drain diode recovery time comparable to a discrete fast recovery diode and specified avalanche energy. The device is designed for typical applications such as PWM motor controls, power supplies, and converters.
| Drain-to-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Ta 25°C) | 52 A |
| Total Power Dissipation (Tc 25°C) | 178 Watts |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Single Drain-to-Source Avalanche Energy | 800 mJ |
| Junction-to-Case Thermal Resistance | 0.7 °C/W |
| Static Drain-to-Source On-State Resistance | 0.023 Ohms |
The device is available in a TO-220 package.
Typical applications include PWM motor controls, power supplies, and converters.
The maximum continuous drain current at 25°C is 52 Amps.