ON Semiconductor BC368/BC369 Amplifier Transistors Datasheet

BC368/D is the datasheet for BC368 (NPN) and BC369 (PNP) amplifier transistors.

Brand: ON Semiconductor
Document type: Datasheet
Language: English
Pages: 4
File format: PDF
File size: 65 KB
Published: 12 July, 2012
Updated: 30 September, 2023
MD5 checksum: D103CE08FC894EA108E7F8391EA33D30
PDF: ON Semiconductor BC368/BC369 Amplifier Transistors Datasheet PDF

About this manual

This document provides technical specifications for the BC368 (NPN) and BC369 (PNP) amplifier transistors. It details maximum ratings such as collector-emitter voltage of 20V and continuous collector current of 1.0A, along with thermal characteristics.

What's inside

Features
Maximum Ratings
Thermal Characteristics
Ordering Information
Electrical Characteristics
Package Dimensions

Specifications

Collector-Emitter Voltage (Vceo)	20 Vdc
Collector Current - Continuous	1.0 Adc
Total Device Dissipation (To-92)	625 mw @ Ty = 25°C
Operating and Storage Junction Temperature Range	-55 to +150 °C
DC Current Gain (hFE)	85 - 375
Bandwidth Product (fT)	65 MHz
Collector-Emitter Saturation Voltage (Vce(sat))	0.5 V

Frequently asked questions

What is the maximum collector-emitter voltage for BC368/BC369?

The maximum collector-emitter voltage (Vceo) is 20 Vdc.

What are the operating temperature limits for these transistors?

The operating and storage junction temperature range is -55 to +150 °C.

What is the typical DC current gain for BC368/BC369?

The DC current gain (hFE) ranges from 85 to 375 under specified conditions.

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