BC327 is a PNP type silicon transistor produced by ON Semiconductor
This document is a datasheet for the BC327 series of PNP silicon amplifier transistors manufactured by ON Semiconductor. It provides comprehensive technical data including maximum ratings, thermal characteristics, and electrical specifications for the BC327, BC327-16, BC327-25, and BC327-40 models. The text includes detailed tables for DC current gain, saturation voltage, and breakdown voltages under specific test conditions.
| Collector-Emitter Voltage (VCEO) | -45 Vdc |
|---|---|
| Collector-Base Voltage (VCE) | -50 Vdc |
| Collector Current (Continuous) | -800 mA |
| Total Power Dissipation @ 25°C | 625 mW |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Ambient | 200 °C/W |
| DC Current Gain (BC327) | 100 to 630 |
| Collector-Emitter Saturation Voltage | -0.7 Vdc |
The maximum collector-emitter voltage (VCEO) is -45 Vdc.
The continuous collector current (IC) is rated at -800 mAdc.
The operating and storage junction temperature range is from -55 to +150 °C.