BC337, BC337−16, BC337−25, BC337−40, BC338−25 are NPN Silicon Amplifier Transistors, Pb−Free Packages are Available
This document provides technical specifications for the BC337 and BC338 series of NPN silicon amplifier transistors. It details maximum ratings, electrical characteristics such as current gain and breakdown voltages, and small-signal parameters including output capacitance and bandwidth product.
The datasheet also includes thermal characteristics, safe operating area graphs, and ordering information for various package types, primarily the TO-92 style. It specifies shipping quantities and availability of Pb-Free packages.
| Collector - Emitter Voltage (BC337) | 45 V |
|---|---|
| Collector - Emitter Voltage (BC338) | 25 V |
| Collector Current — Continuous | 800 mA |
| Total Device Dissipation (Ta = 25°C) | 625 mW |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Ambient | 200 °C/W |
| DC Current Gain (BC337, Ig = 100 mA) | 100 to 630 |
| DC Current Gain (BC337-16, Ig = 100 mA) | 400 to 250 |
| DC Current Gain (BC337-25/BC338-25, Ig = 100 mA) | 1 to 4 |
| Current-Gain — Bandwidth Product | 210 MHz |
The maximum collector-emitter voltage for the BC337 is 45 V.
The continuous collector current rating is 800 mA.
The operating and storage junction temperature range is -55 to +150 °C.
Yes, Pb-Free packages are available for these transistors.