This data sheet provides maximum ratings, pin assignments, functional characteristics and more for the NTB65N02R/D
This document provides a product preview for the NTB65N02R and NTP65N02R N-Channel Power MOSFETs. These devices utilize the Planar HD3e Process to deliver fast switching performance and low conduction losses. They are available in TO-220AB and D2PAK packages, offering a choice of mounting options for various power applications.
| Drain-to-Source Voltage | 24 V |
|---|---|
| Single Pulse Drain Current | 160 A |
| Total Power Dissipation | 78 W |
| Operating Temperature Range | -55 to 150 °C |
| Turn-On Delay Time | 11.2 ns |
| Package Types | TO-220AB, D2PAK |
The device operates and stores within a temperature range of -55°C to 150°C.
The component operates between -55°C and 150°C for both operation and storage.
The total power dissipation is rated at 78 W when the case temperature is 25°C.