FDS3572 is an N-channel power MOSFET with a working voltage of 80V, maximum current of 8.9A, and resistance of 16mΩ. The product features low Miller charge, low QRR body diode, optimized efficiency at high frequencies, and UIS capability.
This document is a technical datasheet for the Fairchild Semiconductor FDS3572, an N-Channel PowerTrench MOSFET rated at 80V and 8.9A continuous drain current. The device features low Miller charge, low Qgss body diode characteristics, and optimized efficiency at high frequencies.
| Drain to Source Voltage | 80 V |
|---|---|
| Power Dissipation | 25 W |
| Operating and Storage Temperature | -55 to 150 °C |
| Package Type | SO-8 |
The maximum rated junction temperature (Tj) is 150°C.
The device operates and stores safely between -55°C and 150°C.