FDS3580 is a 80V N-Channel PowerTrench MOSFET from Fairchild Semiconductor International. This device features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications, making it ideal for use in synchronous or conventional switching PWM controllers in DC/DC power supplies.
The FDS3580 is an N-Channel MOSFET designed to improve the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It features faster switching, lower gate charge, and high performance trench technology for extremely low on-resistance.
| Drain-Source Voltage | 80 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Pulsed Drain Current | 50 A |
| Operating Junction Temperature | -55 to +150 °C |
The maximum drain-source voltage is 80 V.
The typical total gate charge is 34 nC.
The operating and storage junction temperature range is -55 to +150 °C.