This document describes the features and characteristics of the FDS3890 80V N-Channel Dual PowerTrench MOSFET. It is designed for DC/DC converters and offers faster switching speed and lower gate charge, resulting in higher power conversion efficiency.
This document is a technical datasheet for the Fairchild Semiconductor FDS3890, an 80V N-Channel Dual PowerTrench® MOSFET. The device is specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Key features include fast switching speed, high performance trench technology for extremely low on-resistance, and high power and current handling capability. The datasheet provides absolute maximum ratings, electrical characteristics, typical characteristics graphs, thermal data, and ordering information.
| Drain-Source Voltage | 80 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current | 4.7 A |
| Pulsed Drain Current | 20 A |
| Power Dissipation (Dual) | 2 W |
| Operating Junction Temperature Range | -55 to +175 °C |
| Thermal Resistance (Junction-to-Ambient) | 78 °C/W |
| On-Resistance (Vgs=10V, Id=4.7A) | 34 mΩ |
| Gate Threshold Voltage (Typical) | 2.3 V |
It is designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
The device features fast switching speed, high performance trench technology for extremely low on-resistance, and high power and current handling capability.
The maximum continuous drain current is 4.7 A.