FDMC86116LZ N-Channel Power Trench® MOSFET is a logic level MOSFET produced by Fairchild Semiconductor Corporation. It has a maximum RDS(on) of 103 mΩ and a maximum current of 7.5 A. It has HBM ESD protection level > 3 KV, 100% UIL testing, and RoHS compliance.
This document is a technical datasheet for the Fairchild Semiconductor FDMC86116LZ, an N-Channel logic level MOSFET produced using the advanced Power Trench process. The device is designed to minimize on-state resistance while maintaining superior switching performance and includes a G-S zener diode for enhanced ESD protection.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as 100V drain-to-source voltage and 7.5A continuous drain current (package limited). It details typical characteristics like on-resistance, capacitance, switching times, and thermal resistance, along with application information for DC-DC conversion circuits.
| Drain to Source Voltage (Vdss) | 100 V |
|---|---|
| Continuous Drain Current (Package limited) | 7.5 A |
| Continuous Drain Current (Silicon limited) | 9.6 A |
| Power Dissipation (Ta = 25°C) | 19 W |
| Operating and Storage Junction Temperature Range | -55 to +150 C |
| Thermal Resistance (Junction to Case) | 6.5 °C/W |
The device supports a continuous drain current of 7.5 A when the package temperature is maintained at 25°C.
The MOSFET is rated to operate and store within a junction temperature range of -55 to +150 °C.
The maximum power dissipation is 19 W when the case temperature is held at 25°C.